Semiconductor module

US7879652B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Otremba · Kaufbeuren, DE
• Josef Hoeglauer · Munich, DE
• Klaus Schiess · Allensbach, DE

Key dates

• Filing date: Jul 26, 2007
• Grant date: Feb 1, 2011
• Expiry date: Jul 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/181
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor module is disclosed. One embodiment provides a first semiconductor chip having a first contact pad on a first main surface and a second contact pad on a second main surface, a first electrically conductive layer applied to the first main surface, a second electrically conductive layer applied to the second main surface, and an electrically insulating material covering the first electrically conductive layer, wherein a surface of the second electrically conductive layer forms an external contact pad and the second electrically conductive layer has a thickness of less than 200 μm.