Patent · US Active

Wafer and a method for manufacturing a wafer

US7879699B2 · kind B2 · utility

63Cited by

10References

10Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Hans-Joerg Timme · Ottobrunn, DE
Helmut Strack · Hersbruck, DE

Key dates

Filing date	Sep 28, 2007
Grant date	Feb 1, 2011
Priority date	—
Expiry date	Oct 2, 2029

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/26
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A wafer includes a wafer frontside and a region adjacent to the device surface, wherein the region includes vacancy-oxygen complexes and the wafer frontside includes a predetermined surface structure to form thereon a device with a desired property.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.