Etch selectivity enhancement in electron beam activated chemical etch
US7879730B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Apr 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31744
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.