Composition for etching silicon oxide and method of forming a contact hole using the same
US7879736B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Aug 17, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.