Semiconductor device including a free wheeling diode

US7880200B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Frank Hille · Munich, DE
• Carsten Schaeffer · Annenheim, AT
• Frank Pfirsch · Birkenfeld, DE
• Holger Ruething · Munich, DE

Key dates

• Filing date: Sep 28, 2007
• Grant date: Feb 1, 2011
• Expiry date: Dec 24, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A semiconductor device and production method is disclosed. In one embodiment, the semiconductor device includes a first electrode and a second electrode, located on surfaces of a semiconductor body, and an insulated gate electrode. The semiconductor body has a contact groove for the first electrode in an intermediate oxide layer. Highly doped zones of a first conduction type are located in edge regions of the source connection zone. Below the highly doped zones of the first conduction type, there are highly doped zones of a body zone with a complementary conduction type. In a central region of the source connection zone, the body zone has a net charge carrier concentration with a complementary conduction type which is lower than the charge carrier concentration in the edge regions of the source connection zone.