Bottom electrode of metal-insulator-metal capacitor
US7880213B2 · kind B2 · utility
1Cited by
3References
6Claims
0Family size
Assignee
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Key dates
| Filing date | May 15, 2006 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Sep 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure and a method of fabricating a bottom electrode of a metal-insulator-metal (MIM) capacitor are provided. First, a transition metal layer is formed on a substrate. Thereafter, a self-assembling polymer film having a nano-pattern is formed on the transition metal layer to expose a portion of the transition metal layer. Using the self-assembling polymer film as a mask, the exposed portion of the transition metal layer is treated to undergo a phase change so that the bottom electrode can achieve a nano-level of phase separation. Thereafter, the self-assembling polymer film is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.