Plasma producing method and apparatus as well as plasma processing apparatus
US7880392B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 26, 2006 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | May 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.