Tunnel-type magnetic detecting element and method of manufacturing the same
US7881024B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | Feb 1, 2011 |
| Priority date | — |
| Expiry date | Nov 27, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.