Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
US7883739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2003 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Dec 8, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24628
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.