Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7884343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2008 |
| Grant date | Feb 8, 2011 |
| Priority date | — |
| Expiry date | Jan 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Memory cells are described along with methods for manufacturing. A memory cell described herein includes a bottom electrode, a top electrode overlying the bottom electrode, a via having a sidewall extending from a bottom electrode to a top electrode, and a memory element electrically coupling the bottom electrode to the top electrode. The memory element has an outer surface contacting a dielectric sidewall spacer that is on the sidewall of the via, and comprises a stem portion on the bottom electrode and a cup portion on the stem portion. A fill material is within an interior defined by an inner surface of the cup portion of the memory element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.