Patent · US Active

Sense amplifier for low-supply-voltage nonvolatile memory cells

US7885116B2 · kind B2 · utility

1Cited by

11References

16Claims

0Family size

Inventors

Marco Pasotti · Pavia, IT
Guido De Sandre · Brugherio, IT
David Iezzi · Merate, IT
Marco Poles · Ghedi, IT

Key dates

Filing date	Feb 9, 2009
Grant date	Feb 8, 2011
Priority date	—
Expiry date	Feb 9, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG11C7/14
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A sense amplifier for nonvolatile memory cells includes a reference cell, a first load, connected to the reference cell, and a second load, connectable to a nonvolatile memory cell, both the first load and the second load having controllable resistance; a control circuit of the first load and of the second load supplies the first load and the second load with a control voltage irrespective of an operating voltage between a first conduction terminal and a second conduction terminal of the first load.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.