Method for cleaning treatment chamber in substrate treating apparatus and method for detecting endpoint of cleaning
US7887637B2 · kind B2 · utility
3Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2005 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Dec 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.