Vacuum processing apparatus
US7887669B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Nov 23, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention provides a plasma processing apparatus for processing a wafer mounted on a sample stage placed in a vacuum processing chamber using a plasma generated in the vacuum chamber. The plasma processing apparatus comprises a plate placed in the vacuum processing vessel above and opposed to the wafer, the plate having a through hole through which a first processing gas is introduced; a first and second cylindrical member arranged vertically and adjacently; and means communicating with the gap between the first and second cylindrical member for supplying a second processing gas. The wafer is processed while the first processing gas and the second processing gas having different compositions are supplied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.