Solar cell contact formation process using a patterned etchant material
US7888168B2 · kind B2 · utility
15Cited by
53References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Jan 29, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
Embodiments of the invention contemplate the formation of a high efficiency solar cell using novel methods to form the active region(s) and the metal contact structure of a solar cell device. In one embodiment, the methods include the use of various etching and patterning processes that are used to define point contacts through a blanket dielectric layer covering a surface of a solar cell substrate. The method generally includes depositing an etchant material that enables formation of a desired pattern in a dielectric layer through which electrical contacts to the solar cell device can be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.