Non-volatile sonos-type memory device
US7888209B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 7, 2009 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Oct 7, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A semiconductor memory device with the thickness of both a tunnel film and a top film provided thereon configured to be in the FN tunneling region (4 nm or more). Data retention characteristics can be improved by configuring both a tunnel film and a top film to have a thickness in the FN tunneling region. Secondly, a high-concentration impurity region of a conductivity type the same as that of the substrate is provided in a substrate region arranged between assist gates provided adjacently to each other. The aforementioned high-concentration impurity region makes a depletion layer extremely thin when bias is applied to the assist gates. Hot holes generated between bands in the depletion region are injected into a charge storage region and the holes and electrons make pairs and disappear, enabling easy data erasing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.