Fabrication of substrates with a useful layer of monocrystalline semiconductor material
US7888235B2 · kind B2 · utility
5Cited by
46References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Nov 24, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/967
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.