Resist, barc and gap fill material stripping chemical and method
US7888301B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2004 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | May 17, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.