CMOS fabrication process utilizing special transistor orientation

US7888710B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Mark Armstrong · Portland, US
• Gerhard Schrom · Hillsboro, US
• Sunit Tyagi · Portland, US
• Paul Packan · Beaverton, US
• Kelin J. Kuhn · Beaverton, US
• Scott Thompson · Portland, US

Key dates

• Filing date: Oct 17, 2007
• Grant date: Feb 15, 2011
• Expiry date: Oct 17, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that current flows in the channels of the transistors are parallel to the <100> direction. Additionally, longitudinal tensile stress is applied to the channels.