Trench capacitors and memory cells using trench capacitors
US7888722B2 · kind B2 · utility
4Cited by
34References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2008 |
| Grant date | Feb 15, 2011 |
| Priority date | — |
| Expiry date | Jan 16, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/37
Abstract
A trench structure and a memory cell using the trench structure. The trench structure includes: a substrate; a trench having contiguous upper, middle and lower regions, the trench extending from a top surface of said substrate into said substrate; the upper region of the trench having a vertical sidewall profile; and the middle region of the trench having a tapered sidewall profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.