Tantalum sputtering target
US7892367B2 · kind B2 · utility
11Cited by
11References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 20, 2004 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | May 31, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.