Wafer electrical discharge control using argon free dechucking gas
US7892445B1 · kind B1 · utility
10Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of dechucking a wafer, with a low-k dielectric layer, held onto an electrostatic chuck by an electrostatic charge in a plasma chamber is provided. The electrostatic clamping voltage is removed. An essentially argon free dechucking gas is provided into the plasma chamber. A dechucking plasma is formed from the dechucking gas in the plasma chamber. The dechucking plasma is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.