Transistor with a channel comprising germanium
US7892927B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Apr 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0323
Abstract
A transistor including a germanium-rich channel. The germanium-rich channel is produced by oxidation of the silicon contained in the silicon-germanium intermediate layer starting from the lower surface of the said intermediate layer. The germanium atoms are therefore caused to migrate towards the upper surface of the silicon-germanium intermediate layer, and are stopped by the gate insulating layer. The migration of the atoms during the oxidation step is thus less prejudicial to the performance of the transistor, since the gate insulator of the transistor has already been produced and is not modified during this step. The migration of the germanium atoms towards the gate insulator, which is immobile, leads to a limitation of the surface defects between the channel and the insulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.