Alexandre Talbot
6Patents
2h-index
10Co-inventors
37Inventor score
Filing activity: Feb 9, 2007 → Aug 4, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7776745B2 | Method for etching silicon-germanium in the presence of silicon | Electricity | 4 | Active |
| US8158495B2 | Process for forming a silicon-based single-crystal portion | Electricity | 2 | Active |
| US7892927B2 | Transistor with a channel comprising germanium | Electricity | 1 | Active |
| US8159109B2 | Microresonator | Electricity | 1 | Active |
| US7858407B2 | Microresonator | Electricity | 0 | Active |
| US7622368B2 | Forming of a single-crystal semiconductor layer portion separated from a substrate | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.