Vapor deposition methods for forming a metal-containing layer on a substrate

US7892964B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Bhaskar Srinivasan · Boise, US
• John Smythe · Boise, US

Key dates

• Filing date: Feb 14, 2007
• Grant date: Feb 22, 2011
• Expiry date: Jul 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Atomic layer deposition methods as described herein can be advantageously used to form a metal-containing layer on a substrate. For example, certain methods as described herein can form a strontium titanate layer that has low carbon content (e.g., low strontium carbonate content), which can result in layer with a high dielectric constant.