Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer
US7893703B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Sep 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.