Patent · US Active

Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer

US7893703B2 · kind B2 · utility

103Cited by
77References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 21, 2006
Grant dateFeb 22, 2011
Priority date
Expiry dateSep 12, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.