Methods of programming and erasing resistive memory devices
US7894243B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2006 |
| Grant date | Feb 22, 2011 |
| Priority date | — |
| Expiry date | Dec 22, 2029 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a first method of writing data to a resistive memory device (i.e. programming or erasing), successive electrical potentials are applied across the resistive memory device, wherein the successive electrical potentials are of increasing duration. In another method of writing data to a resistive memory device (i.e. programming or erasing), an electrical potential is applied across the resistive memory device, and the level of current through the memory device is sensed as the electrical potential is applied. The application of the electrical potential is ended based on a selected level of current through the resistive memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.