Patent · US Active

Formation of epitaxial layer containing silicon and carbon

US7897495B2 · kind B2 · utility

124Cited by
32References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2006
Grant dateMar 1, 2011
Priority date—
Expiry dateOct 10, 2028

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/797
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Methods for formation of epitaxial layers containing silicon are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of the epitaxial layer involves exposing a substrate in a process chamber to deposition gases including two or more silicon source such as silane and a higher order silane. Embodiments include flowing dopant source such as a phosphorus dopant, during formation of the epitaxial layer, and continuing the deposition with the silicon source gas without the phosphorus dopant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.