Tunneling magnetic sensing element including enhancing layer having high Fe concentration in the vicinity of barrier layer
US7898776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 2007 |
| Grant date | Mar 1, 2011 |
| Priority date | — |
| Expiry date | Dec 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A tunneling magnetic sensing element is provided, in which an increase in the magnetostriction of a free magnetic layer is reduced and the rate of change in resistance is high. A laminate T1 constituting the tunneling magnetic sensing element includes a portion in which a pinned magnetic layer, a barrier layer, and a free magnetic layer are disposed in that order from the bottom. An enhancing layer disposed on the barrier layer side of the free magnetic layer includes a first enhancing layer on the barrier layer side and a second enhancing layer on the soft magnetic layer side, and the Fe content of a CoFe alloy constituting the first enhancing layer is specified to be larger than the Fe content of the CoFe alloy of the second enhancing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.