Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system
US7901743B2 · kind B2 · utility
12Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Mar 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and system for treating a dielectric film on a plurality of substrates includes disposing the plurality of substrates in a batch processing system, the dielectric film on the plurality of substrates having a dielectric constant value less than the dielectric constant of SiO2. The plurality of substrates are heated, and a treating compound comprising a CxHy containing compound, wherein x and y represent integers greater than or equal to unity is introduced to the process system. A plasma is formed and at least one surface of the dielectric film on said plurality of substrates is exposed to the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.