Metrology of bilayer photoresist processes
US7901852B2 · kind B2 · utility
1Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 29, 2008 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Mar 14, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.