Heteroepitaxial deposition over an oxidized surface
US7901968B2 · kind B2 · utility
17Cited by
15References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Apr 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments of the invention are related to manufacturing semiconductors. Methods and apparatuses are disclosed that provide thin and fully relaxed SiGe layers. In some embodiments, the presence of oxygen between a single crystal structure and a SiGe heteroepitaxial layer, and/or within the SiGe heteroepitaxial layer, allow the SiGe layer to be thin and fully relaxed. In some embodiments, a strained layer of Si can be deposited over the fully relaxed SiGe layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.