Inventor · Chandler, AZ, US

Keith Doran Weeks

42Patents
17h-index
30Co-inventors
81Inventor score

Filing activity: Apr 24, 2003 → Jun 20, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US7297641B2 Method to form ultra high quality silicon-containing compound layers Electricity 593 Expired
US8278176B2 Selective epitaxial formation of semiconductor films Electricity 540 Active
US9324811B2 Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same Electricity 480 Active
US9099423B2 Doped semiconductor films and processing Electricity 397 Active
US7294582B2 Low temperature silicon compound deposition Electricity 97 Expired
US7651953B2 Method to form ultra high quality silicon-containing compound layers Electricity 75 Active
US7964513B2 Method to form ultra high quality silicon-containing compound layers Electricity 72 Active
US10109479B1 Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice Electricity 65 Active
US10566191B1 Semiconductor device including superlattice structures with reduced defect densities Electricity 42 Active
US10468245B2 Semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice Electricity 41 Active
US7816236B2 Selective deposition of silicon-containing films Electricity 36 Active
US9312131B2 Selective epitaxial formation of semiconductive films Electricity 35 Active
US7438760B2 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition Electricity 29 Expired
US10811498B2 Method for making superlattice structures with reduced defect densities Electricity 27 Active
US10727049B2 Method for making a semiconductor device including compound semiconductor materials and an impurity and point defect blocking superlattice Electricity 27 Active
US7029995B2 Methods for depositing amorphous materials and using them as templates for epitaxial films by solid phase epitaxy Electricity 22 Expired
US7901968B2 Heteroepitaxial deposition over an oxidized surface Electricity 17 Active
US11075078B1 Method for making a semiconductor device including a superlattice within a recessed etch Electricity 17 Active
US11177351B2 Semiconductor device including a superlattice with different non-semiconductor material monolayers Electricity 14 Active
US11302823B2 Method for making semiconductor device including a superlattice with different non-semiconductor material monolayers Electricity 9 Active
US7005160B2 Methods for depositing polycrystalline films with engineered grain structures Chemistry; Metallurgy 9 Expired
US8088223B2 System for control of gas injectors Chemistry; Metallurgy 9 Active
US11810784B2 Method for making semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Performing Operations; Transporting 8 Active
US11631584B1 Method for making semiconductor device with selective etching of superlattice to define etch stop layer Electricity 7 Active
US11923418B2 Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer Electricity 7 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.