Methods of manufacturing group III nitride semiconductor devices with silicon nitride layers
US7901994B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2005 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Mar 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Methods of fabricating transistor in which a first Group III nitride layer is formed on a substrate in a reactor, and a second Group III nitride layer is formed on the first Group III nitride layer. An insulating layer such as, for example, a silicon nitride layer is formed on the second Group III nitride layer in-situ in the reactor. The substrate including the first Group III nitride layer, the second group III nitride layer and the silicon nitride layer is removed from the reactor, and the silicon nitride layer is patterned to form a first contact hole that exposes a first contact region of the second Group III nitride layer. A metal contact is formed on the first contact region of the second Group III nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.