Method of manufacturing SOI wafer and thus-manufactured SOI wafer
US7902042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2005 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Dec 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an SOI wafer includes a bonding step, a thinning and a bonding annealing step. Assuming refractive index n1 of SiO2 as 1.5, refractive index n2 of Si as 3.5, and optical thickness tOP of the silicon oxide film 2 and the SOI layer 15 in the infrared wavelength region as tOP=n1×t1+n2×t2, the thickness t1 of the silicon oxide film 2 and thickness t2 of the SOI layer so as to satisfy a relation of 0.1λ<tOP<2λ, and so as to make (t1×n1)/(t2×n2) fall within 0.2 to 3. By nuclei killer annealing carried out before the bonding annealing, density of formation of oxygen precipitate in the base wafer after the bonding annealing is adjusted to less than 1×109/cm3. This configuration successfully provides a method of manufacturing the SOI wafer having the thin silicon oxide film and the SOI layer, and being less likely to cause warping.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.