Methods of fabricating dual fin structures

US7902057B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Terrence B. McDaniel · Boise, US

Key dates

• Filing date: Jul 31, 2007
• Grant date: Mar 8, 2011
• Expiry date: Apr 27, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6213

Abstract

Fin-FET devices and methods of fabrication are disclosed. The Fin-FET devices include dual fins that may be used to provide a trench region between a source region and a drain region. In some embodiments, the dual fins may be formed by forming a trench with fin structures on opposite sides in a protruding region of a substrate. The dual fins may be useful in forming single-gate, double-gate or triple-gate fin-FET devices. Electronic systems including such fin-FET devices are also disclosed.