Patent · US Expired

Electrodepositing a metal in integrated circuit applications

US7902062B2 · kind B2 · utility

0Cited by

22References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Bradl · Regensburg, DE
Klaus Kerkel · Neutraubling, DE
Christine Lindner · Pyrbaum, DE

Key dates

Filing date	May 23, 2005
Grant date	Mar 8, 2011
Priority date	—
Expiry date	Aug 22, 2025

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/24917
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is described in which a contact hole (18) to an interconnect (14) in an insulating layer (16) is fabricated. A barrier layer (20) is subsequently applied. Afterward, a photoresist layer (30) is applied, irradiated and developed. With the aid of a galvanic method, a copper contact (32) is then produced in the contact hole (18). Either the barrier layer (20) or an additional boundary electrode layer (22) serves as a boundary electrode in the galvanic process. Critical metal contaminations are minimized in production.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.