Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7902537B2 · kind B2 · utility
5Cited by
53References
25Claims
0Family size
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Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Jun 29, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.