Substrate for semiconductor device and manufacturing method thereof
US7902660B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2006 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Jan 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate for a semiconductor device and a manufacturing thereof, and a semiconductor device using the same and a manufacturing method thereof are disclosed. For example, in the substrate according to the present invention, a core is eliminated, so that the substrate has a very thin thickness, as well, the length of electrically conductive patterns becomes shorter, whereby the electrical efficiency thereof is improved. Moreover, since a carrier having a stiffness of a predetermined strength is bonded on the substrate, it can prevent a warpage phenomenon during the manufacturing process of the semiconductor device. Furthermore, the carrier is removed from the substrate, whereby a solder ball fusing process or an electrical connecting process of the semiconductor die can be easily performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.