Operating method of non-volatile memory
US7903472B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2009 |
| Grant date | Mar 8, 2011 |
| Priority date | — |
| Expiry date | Sep 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/10
Abstract
An operating method of a non-volatile memory adapted for a non-volatile memory disposed on an SOI substrate including a first conductive type silicon body layer is provided. The non-volatile memory includes a gate, a charge storage structure, a second conductive type drain region, and a second conductive type source region. In operating such a non-volatile memory, voltages are applied to the gate, the second conductive type drain region, the second conductive type source region and the first conductive type silicon body layer beneath the gate, to inject electrons or holes in to the charge storage structure or evacuate the electrons from the charge storage structure by a method selected from a group consisting of channel hot carrier injection, source side injection, band-to-band tunnelling hot carrier injection and Fowler-Nordheim (F-N) tunnelling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.