Film formation method and apparatus for forming silicon oxide film
US7906168B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Sep 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An oxide film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including a silicon source gas and a second process gas including an oxidizing gas. The oxide film is formed by performing cycles each alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing the adsorption layer on the surface of the target substrate. The silicon source gas is a univalent or bivalent aminosilane gas, and each of the cycles is arranged to use a process temperature lower than that used for a trivalent aminosilane gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.