PECVD methods for producing ultra low-k dielectric films using UV treatment
US7906174B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 7, 2006 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Apr 13, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of preparing low-k carbon-doped oxide (CDO) films having high mechanical strength are provided. The methods involve contacting the substrate with a CDO precursor to deposit the film typically using a plasma-enhanced chemical vapor deposition (PECVD) method. After the film is deposited, it is exposed to ultraviolet radiation in a manner that increases cross-linking and/or lowers the dielectric constant of the film. The resulting films have ultra-low dielectric constants, e.g., about 2.5, but also high mechanical strength, e.g., a modulus of at least about 7.5 GPa. In certain embodiments, a single hydrocarbon precursor is used, resulting in an improved process for obtaining ULK films that does not require dual (porogen and backbone) precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.