P-type layer for a III-nitride light emitting device
US7906357B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 15, 2006 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Dec 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.