Reducing leakage currents in memories with phase-change material
US7906391B2 · kind B2 · utility
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Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Sep 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped N type region. As a result of the configuration of the N type regions forming the buried wordline, the leakage current of the buried wordline to the substrate under reverse bias conditions may be significantly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.