Charged particle beam apparatus
US7906761B2 · kind B2 · utility
8Cited by
3References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2008 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Jun 5, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/28
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A charged particle beam apparatus that can achieve both high defect-detection sensitivity and high inspection speed for a sample with various properties in a multi-beam type semiconductor inspection apparatus. The allocation of the primary beam on the sample is made changeable, and furthermore, the beam allocation for performing the inspection at the optimum inspection specifications and at high speed is selected based on the property of the sample. In addition, many optical parameters and apparatus parameters are optimized. Furthermore, the properties of the selected primary beam are measured and adjusted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.