Memory device
US7906772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 4, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Sep 4, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory or switching device includes a mesa and a first electrode conforming to said mesa. The device also includes a second electrode and a phase-change or switching material disposed between said first and second electrodes. The phase-change or switching material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. Also described is a method for making a memory or switching device. The method includes providing a first insulator and configuring the first insulator to provide a mesa. A first conductive layer is provided conforming to the mesa. A phase-change or switching material is provided over a portion of the first conductive layer, and a second conductive layer is provided over the phase-change or switching material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.