Ge imager for short wavelength infrared

US7906825B2 · kind B2 · utility

Assignee

• Sharp Laboratories of America, Inc. · US

Inventors

• Douglas J. Tweet · Camas, US
• Jer-Shen Maa · Vancouver, US
• Jong-Jan Lee · Camas, US
• Sheng Teng Hsu · Camas, US

Key dates

• Filing date: Dec 4, 2009
• Grant date: Mar 15, 2011
• Expiry date: Dec 4, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/184

Abstract

A germanium (Ge) short wavelength infrared (SWIR) imager and associated fabrication process are provided. The imager comprises a silicon (Si) substrate with doped wells. An array of pin diodes is formed in a relaxed Ge-containing film overlying the Si substrate, each pin diode having a flip-chip interface. There is a Ge/Si interface, and a doped Ge-containing buffer interposed between the Ge-containing film and the Ge/Si interface. An array of Si CMOS readout circuits is bonded to the flip-chip interfaces. Each readout circuit has a zero volt diode bias interface.