Tunneling magnetic sensing element having free layer containing CoFe alloy
US7907370B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2007 |
| Grant date | Mar 15, 2011 |
| Priority date | — |
| Expiry date | Oct 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/16
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also disclosed. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.