Method for fabricating a cylinder-type capacitor utilizing a connected ring structure
US7910452B2 · kind B2 · utility
308Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2007 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Oct 12, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
Abstract
A method for fabricating a capacitor includes forming an isolation layer over a substrate. The isolation layer forms a plurality of open regions. Storage nodes are formed on surfaces of the open regions. An upper portion of the isolation layer is etched to expose upper outer walls of the storage nodes. A sacrificial layer is formed over the isolation layer to enclose the upper outer walls of the storage nodes. The isolation layer and the sacrificial layer are then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.