Infinitely selective photoresist mask etch
US7910489B2 · kind B2 · utility
9Cited by
49References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2006 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Aug 19, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.