Plasma oxidizing method, plasma processing apparatus, and storage medium
US7910495B2 · kind B2 · utility
2Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2007 |
| Grant date | Mar 22, 2011 |
| Priority date | — |
| Expiry date | Feb 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.